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TI Multi Impact Ad September-October 2025

nicolette.emmino

Created on August 27, 2025

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How GaN changes power management

Solar Energy Systems with TOLL GaN

What is GaN?

GaN in your next solar design

Explore

What is Gallium Nitride GaN?

Gallium nitride (GaN) is a wide bandgap semiconductor that enables higher power density and more efficiency than traditional silicon metal-oxide semiconductor field-effect transistors (MOSFETs) and insulated gate bipolar transistors (IGBTs). GaN processes power more efficiently than silicon-only solutions, reducing power loss by 80% in power converters and minimizing the need for added cooling components. By packing more power into smaller spaces, GaN lets you design smaller, lighter systems.

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Shorten your time to market with our resources, including power loss calculators, PLECS models for circuit simulation and evaluation boards for testing.

GaN devices can help achieve higher switching frequencies over 500kHz, which results in up to 60% smaller magnetics.

TI GaN devices are designed for safety with more than 80 million hours of reliability testing and protection features.

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Our GaN FETs with integrated drivers can reach switching speeds of 150V/ns.

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Smaller system size, higher power density.

Built for reliability.

Dedicated design tools and resources.

Faster switching speeds, higher efficiency.

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How GaN changes power management

Solar Energy Systems with TOLL GaN

What is GaN?

GaN in your next solar design

Explore

3 reasons GaN is changing power management

Many data centers – keys to our always-on connectivity – rely on an increasingly popular semiconductor technology that can improve energy efficiency and power density. That technology – gallium nitride, often referred to as GaN – is a wide-bandgap semiconductor material used in a growing list of high-voltage applications that require power supplies with greater power density, energy efficiency, higher switching frequencies, better thermal management and smaller sizes. In addition to data centers, those applications include HVAC systems, telecom power supplies, solar inverters and power supplies that charge notebook computers.

“Gallium nitride is a key step toward improving power density and increasing efficiency in power systems and power supplies across multiple applications,” said David Snook, who leads our company’s GaN product line. “The number of companies using GaN in their designs is growing rapidly. It’s critical for reducing power consumption and increasing efficiency.”

For more than 60 years, silicon has been the foundation of semiconductor power-management components that convert alternating current (AC) to direct current (DC) and convert DC voltage inputs to fit the needs of everything from mobile phones to industrial robots. While components have been refined and optimized, physics has caught up with silicon. Today, silicon can’t run at the frequencies required to deliver more power without growing in size.

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How GaN changes power management

Solar Energy Systems with TOLL GaN

What is GaN?

GaN in your next solar design

Explore

Unlock the power of TI GaN in your next solar design

Solar power optimizer

TI's power conversion solutions with integrated GaN help you develop more affordable and efficient solar systems that integrate seamlessly with energy storage systems and EV charging infrastructure. TI GaN enables faster switching speeds, which leads to higher power density and more efficiency than traditional converters. GaN packs more power in smaller spaces, allowing you to design smaller, safer, lighter and better systems.

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Faster switching (10x more than traditional converters) enable high power density and efficiency.

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Reduce solution size in half, leading to lower system costs.

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Integrated gate driver and advanced protection features make life easier – TI does the hard work for you.

How GaN changes power management

Solar Energy Systems with TOLL GaN

What is GaN?

GaN in your next solar design

Explore

Pushing the Boundaries of Solar Energy Systems with TOLL GaN

The energy crisis is looming and shifting gears to non-conventional sources of energy is the need of the hour. The increasing interest and investment in the adoption of renewable energy systems by both the consumers and producers justifies this shift, signaling a revolution that the energy infrastructure world is about to witness. Solar energy systems are gaining momentum, with the performance of PV inverters being at the heart of technical innovations for highly efficient harnessing of the sun’s energy. One step towards effectively harnessing solar energy is the use of GaN, which is rapidly replacing the incumbent SiCFETs and IGBT systems. This change stems from the need for better performing systems in terms of efficiency, heat dissipation, smaller size, ease of installation and lower costs.

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  • GaN vs. IGBT vs. SiCFETs
  • Introduction to TOLL packaging
  • TOLL in energy infrastructure
  • Designing with TOLL devices