Power Today’s Data Centers More Efficiently and Reliably

Power Today’s Data Centers More Efficiently and Reliably

Benefits & Applications

As your partner in power management, we are committed to helping you push more power into your data center designs efficiently, confidently and reliably with our products that deliver performance, reliability and scalability for data centers today and in the future.

Hot-Swap eFuse Devices

Integrated TOLL-packaged GaN Devices

Data Center Products

Start

Benefits & Applications

Benefit No. 1

Achieve unprecedented power density, efficiency and performance

Benefit No. 2

Simplify thermal design with innovative packaging options

Benefits & Applications

Hot-Swap eFuse Devices

Integrated TOLL-packaged GaN Devices

Benefit No. 3

Reduce operational risks and server downtime with comprehensive system-level protection

Data Center Products

Learn how thermal efficiency is helping data centers run more sustainably

Benefit No. 4

Meet your power design needs with confidence

Power Modern AI Data Centers with an Integrated 48V Hot-swap eFuse Device

As high-performance computing and AI drive greater power demands in data centers, engineers face challenges in managing power levels above 6kW while maintaining efficiency, safety, and scalability. Traditional hot-swap controllers with discrete FETs struggle under these high-power conditions, leading to bulky, complex, and less efficient designs. Texas Instruments addresses these issues with its 48V hot-swap eFuse devices, the TPS1689 and TPS1685, which integrate current monitoring and protection features into a compact design—reducing solution size by up to 50%. Key features like a blanking timer to prevent false trips, support for stacking, active current sharing, fault logging, and health monitoring enhance system reliability. Built with an industry-standard footprint, these devices offer a robust, scalable solution for today’s power-dense data center architectures.

Benefits & Applications

Hot-Swap eFuse Devices

Read full article

Integrated TOLL-packaged GaN Devices

Enhancing server protection and performance

Advanced stacking and current-sharing solutions

Data Center Products

TPS1685

TPS1689

9V to 80V, 3.65mΩ, 20A stackable integrated hot swap (eFuse) with accurate and fast current monitor

9V to 80V, 3.65mΩ, 20A stackable integrated hot swap (eFuse) with PMBus digital telemetry

View TPS1685EVM

Drive innovation in power-supply design with integrated TOLL-packaged GaN devices

Today’s power-supply designs require high efficiency and power density. As a result, designers are using gallium nitride (GaN) devices across various power-conversion topologies. GaN enables high-frequency switching, which reduces passive component size and boosts power density, while also minimizing switching, gate-drive, and reverse-recovery losses compared to silicon and SiC. Designers commonly use 650V GaN FETs for AC/DC stages and 100V or 200V versions for DC/DC conversion. To support streamlined procurement, devices with industry-standard footprints—like the TOLL package in the 650V range—are becoming popular in high-power designs.

Benefits & Applications

Hot-Swap eFuse Devices

Read full article

Integrated TOLL-packaged GaN Devices

LMG3650EVM-114

LMG3650R025

Learn more about how GaN helps engineers Design faster, cooler systems with less energy and a smaller footprint

You can use the photograph, 5.5V input, 6A step-down power module with integrated inductor and I2C interface in QFN

You can use the photograph, 650V 25mΩ TOLL-packaged GaN FET with integrated driver, protection and zero-voltage detection

Data Center Products

Learn More

Learn More

LMG3650R035

LMG3650R070

You can use the photograph, 650V 35mΩ TOLL-packaged GaN FET with integrated driver and protection

You can use the photograph, 650V 70mΩ TOLL-packaged GaN FET with integrated driver and protection

Learn More

Learn More

Confidently Power Your Data Center Design with These Innovative Products

UCC33421-Q1

You can use the photograph, Automotive, 5V/5V, 1.5W 5kVrms isolated DC-DC power module with integrated transformer

View Product

TPS546E25

4V to 18V input, 50A, stackable PMBus synchronous step-down converter

View Product

LM51770

You can use the photograph, 78V wide-VIN bidirectional 4-switch buck-boost controller

View Product

LMG2100R026

You can use the photograph, 100V 2.6mΩ half-bridge gallium nitride (GaN) power stage

View Product

TPS544C27

You can use the photograph, 4V to 18V input, 35A, PMBus and SVID synchronous step-down converter

View Product

Benefits & Applications

UCD3138

You can use the photograph, Highly Integrated Digital Controller for Isolated Power with 3 Feedback Loops and 8 DPWM Outputs

View Product

Hot-Swap eFuse Devices

Integrated TOLL-packaged GaN Devices

TPS548B23

You can use the photograph, 4V to 16V, 20A Synchronous step-down converter

View Product

LMG3100R017

You can use the photograph, 6V 3A step-down module with optional frequency synchronization, adjustable soft-start and tracking

View Product

UCG28826

You can use the photograph, Self-biased high frequency QR flyback converter with integrated GaN (65W)

View Product

Data Center Products

LMG3650R025

You can use the photograph, 650V 25mΩ TOLL-packaged GaN FET with integrated driver, protection and zero-voltage detection

View Product

Enhancing server protection and performance

The blanking timer offers advantages in enterprise server systems by striking a balance between system protection and performance optimization. As shown in Figure 1, this feature enables short transient overloads to pass through without triggering a circuit breaker, ensuring that temporary, high-amplitude load pulses common in AI, GPU and processor-intensive applications do not disrupt the system. However, the eFuse promptly shuts down the circuit during sustained overcurrent events.

Other advantages include: • Cost optimization. The blanking timer minimizes the need for oversized power-supply units (PSUs) and reduces the number of eFuses required in parallel configurations. This significantly lowers bill-of-materials costs while maintaining reliable operation. • Improved power density. By reducing the number and size of high-current-carrying components, the system can achieve a more compact design, freeing up valuable printed circuit board (PCB) space and improving thermal management. • Flexibility and customization. Programmable fault intervals enable designers to fine-tune the system response to match specific transient profiles, optimizing performance for unique workloads.

You can set the overcurrent protection threshold to 1.1 times the thermal design current instead of accounting for maximum transient loads (typically 1.7 times). This approach reduces the size and cost of PSUs compared to conventional designs, which require the PSU to support the peak transient current. These benefits make the blanking timer a pivotal feature for high-performance server systems.

Advanced stacking and current-sharing solutions

The growing power demands of AI-driven processors and servers have made efficient power distribution systems a requirement, with smart eFuses playing an important role. Traditional parallel operation of eFuses, as shown in Figure 2, presents significant challenges given mismatches in the drain-to-source on-resistance (RDS (on)), PCB trace resistances, and comparator thresholds. These mismatches result in uneven current sharing among eFuses (where some eFuses carry more current than others) and often cause premature tripping of individual eFuses, even when the overall system current is below the trip threshold. Such false tripping can lead to unnecessary system downtimes, reduced reliability, and increased operational inefficiencies.

To address these challenges, TI has introduced a total system current-limit approach in its eFuses that leverages interconnected IMON pins. This approach designates one eFuse as the primary controller to monitor the total system current. By relying on the total current rather than individual eFuse currents, the system avoids inaccuracies caused by mismatched path resistances and ensures that the system trips only when necessary, enhancing operational stability.Active current-sharing technology aids in efficient power distribution by dynamically adjusting the RDS (on) of the FETs to achieve balanced current sharing among eFuses.

When one eFuse carries a disproportionately higher current, increasing its RDS (on) slightly redistributes the current more evenly across all devices. This dynamic regulation minimizes thermal stress on individual eFuses, improving system reliability over extended periods. Having active current sharing occur near the overcurrent rotectionthreshold ensures that it only operates when necessary to avoid unnecessary power losses at lower currents. By activating active current sharing at the optimal threshold, the system achieves uniform thermal stress distribution during high-current operations, improving long-term reliability.